Strain, composition and disorder in ADF imaging of semiconductors

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Strain, composition and disorder in ADF imaging of semi- conductors

The effect of strain, composition and disorder in ADF images is systematically studied as a function of detection angle in order to understand the main contrast mechanisms. We demonstrate that the complex phenomenology in ADF images can be accounted for by accurate simulations and modelling. The advantage of an accurate modelling on the image interpretation will be demonstrated in the case of d...

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ژورنال

عنوان ژورنال: Journal of Physics: Conference Series

سال: 2011

ISSN: 1742-6596

DOI: 10.1088/1742-6596/326/1/012006